| PART |
Description |
Maker |
| 11C83 |
1GHz DIVIDE-BY-248/256 PRESCALER
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| SP8782 SP8782B SP8782MP2Q SP8782MPTC SP8782A SP878 |
1GHZ 16/17, 32/33 MULTI-MODULUS DIVIDER
1 GHz Divide 16/17, Divide 32/33 Multi-Modulus Divider
|
Zarlink Semiconductor Inc
|
| SP8782 SP8782A SP8782ADG SP8782BMP DES9208901AC DE |
6.0V; 1GHz 16/17, 32/33 multi-modulus divider
1GHz ± 16/17, ±32/33 Multi-Modulus Divider 1GHz的16/17，32/33多模数分频器
TV 4C 4#16 PIN WALL RECP 1GHz的16/17，32/33多模数分频器
1GHz 16/17/ 32/33 Multi-Modulus Divider
1GHz 16/17 / 32/33 Multi-Modulus Divider
1GHz 16/17 32/33 Multi-Modulus Divider
1GHz 16/17, 32/33 Multi-Modulus Divider
1GHz 梅 16/17, 梅32/33 Multi-Modulus Divider
1GHz ÷ 16/17, ÷32/33 Multi-Modulus Divider
|
Mitel Networks, Corp.
MITEL[Mitel Networks Corporation]
Mitel Semiconductor
|
| KH600 KH600AI |
1GHz, Differential Input/Output Amplifier
|
Cadeka Microcircuits LLC.
|
| UPB1511TB UPB1511TB-E3 UPB1509GV |
800 MHz INPUT DIVIDE BY 2, 4 PRESCALER IC FOR PORTABLE SYSTEMS
|
NEC Corp.
NEC[NEC]
|
| UPB1512TU-E2-A UPB1512TU UPB1512TU-E2 |
NECs 13 GHz INPUT DIVIDE BY 8 PRESCALER IN FOR SATELLITE COMMUNICATIONS
|
CEL[California Eastern Labs]
|
| MC100H646 MC100EP445FA MC100E156FNR2 MC100EPT22D M |
PECL/TTL-TTL 1:8 Distribution Chip
3.3V / 5VECL 8-Bit Serial/Parallel Converter
5V ECL 3-Bit 4:1 Mux-Latch
3.3V Dual LVTTL/LVCMOS to Differential LVPECL Translator
3.3V / 5V ECL 6-Bit Differential Register with Master Reset
3.3V / 5V 2-Input Differential AND/NAND
3.3V / 5V ECL ÷2 Divider
5V ECL Divide by 2, Divide by 4/6 Clock Generation Chip
5V ECL Low Impedance Driver
|
ON Semiconductor
|
| D2203 D2203UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-12.5V-1GHz,Push-Pull)(镀金多用DMOS射频硅场效应5W-12.5V-1GHz,推拉)
METAL GATE RF SILICON FET
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| BF1005 Q62702-F1498 SIEMENSAG-Q62702-F1498 |
Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| D2053UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-28V-1GHz,Push-Pull)(镀金多用DMOS射频硅场效应5W-28V-1GHz,推拉)
|
SemeLAB
SEME-LAB[Seme LAB]
|
| D2201 D2201UK D2029UK D2030 D2030UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(2.5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应2.5W-12.5V-1GHz,单端)
|
SEME-LAB[Seme LAB]
TT electronics Semelab Limited
|
